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Confirmed plenary speakers:

  • Kimberly Dick Thelander, Lund University, Sweden
    • Understanding the dynamics of III-V nanostructure growth with in-situ TEM
  • Jean-Pascal Duchemin, France (abstract)
    • Low-pressure MOVPE: The time of pioneers
  • Nicolas Grandjean, EPFL Lausanne, Switzerland
    • Efficiency of blue LEDs: GaN surface as a source of point defects
  • Joan Redwing, Penn State Univ. USA
    • MOCVD growth of 2D semiconductor monolayers and heterostructures
  • Heike Riel, IBM Rüschlikon, Switzerland
    • Title tba
  • Masakazu Sugiyama, Univ. Tokyo, Japan
    • Challenges for MOCVD for high-efficiency and cost-effectiv III-V photovoltaic

Confirmed invited speakers:

  • Christoph Berger, OvG-Univ. Magdeburg, Germany (abstract)
    • Heavily Ge-doped GaN films – Properties and applications
  • Iwan Davies, IQE plc, UK
    • Title tba
  • John Geisz, NREL, USA (abstract)
    • Growth of High-Efficiency, Six-Junction, Inverted Metamorphic Solar Cells
  • Kolja Haberland, Laytec AG, Germany
    • Recent progress in in-situ metrology – application to lasers, LEDs and power-devices
  • Jung Han, Yale Univ., USA (abstract)
    • Frontiers in selective area growth, etching, and doping by MOCVD
  • Kazunobu Kojima, Tohoku Univ., Japan (abstract)
    • On the mechanism of AlGaN based DUV-LEDs grown on the AlN templates with dense macrosteps
  • Atsushi Oshiyama, Univ. Tokyo/Nagoya Univ., Japan (abstract)
    • Computics approach toward clarification of microscopic mechanisms of GaN MOVPE
  • Heinz Schmid, IBM Rüschlikon, Switzerland (abstract)
    • Selective area epitaxy for electronic and optical device fabrication on Si
  • Qian Sun, Suzhou Inst. Nano-Tech, -Bionics, China (abstract)
    •  III-Nitride semiconductor growth on Si for photonic and electronic devices