tba
Confirmed plenary speakers:
- Kimberly Dick Thelander, Lund University, Sweden
- Understanding the dynamics of III-V nanostructure growth with in-situ TEM
- Jean-Pascal Duchemin, France (abstract)
- Low-pressure MOVPE: The time of pioneers
- Nicolas Grandjean, EPFL Lausanne, Switzerland
- Efficiency of blue LEDs: GaN surface as a source of point defects
- Joan Redwing, Penn State Univ. USA
- MOCVD growth of 2D semiconductor monolayers and heterostructures
- Heike Riel, IBM Rüschlikon, Switzerland
- Title tba
- Masakazu Sugiyama, Univ. Tokyo, Japan
- Challenges for MOCVD for high-efficiency and cost-effectiv III-V photovoltaic
Confirmed invited speakers:
- Christoph Berger, OvG-Univ. Magdeburg, Germany (abstract)
- Heavily Ge-doped GaN films – Properties and applications
- Iwan Davies, IQE plc, UK
- Title tba
- John Geisz, NREL, USA (abstract)
- Growth of High-Efficiency, Six-Junction, Inverted Metamorphic Solar Cells
- Kolja Haberland, Laytec AG, Germany
- Recent progress in in-situ metrology – application to lasers, LEDs and power-devices
- Jung Han, Yale Univ., USA (abstract)
- Frontiers in selective area growth, etching, and doping by MOCVD
- Kazunobu Kojima, Tohoku Univ., Japan (abstract)
- On the mechanism of AlGaN based DUV-LEDs grown on the AlN templates with dense macrosteps
- Atsushi Oshiyama, Univ. Tokyo/Nagoya Univ., Japan (abstract)
- Computics approach toward clarification of microscopic mechanisms of GaN MOVPE
- Heinz Schmid, IBM Rüschlikon, Switzerland (abstract)
- Selective area epitaxy for electronic and optical device fabrication on Si
- Qian Sun, Suzhou Inst. Nano-Tech, -Bionics, China (abstract)
- III-Nitride semiconductor growth on Si for photonic and electronic devices